PDTA123JT

Symbol Micros: TPDTA123jt

107642

TPDTA123jt

Contractor Symbol:

Case : SOT23

Datasheet

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PNP; 100; 250mW; 50V; 100mA; 180MHz; -65°C ~ 150°C; PDTA123JT,215; PDTA123JT.215;

Parameters

Power dissipation:	250mW
Manufacturer:	NXP
Current gain factor:	100
Case:	SOT23
Cutoff frequency:	180MHz
Max. collector current:	100mA
Max collector-emmiter voltage:	50V

All parameters

         

 

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• Parameters

Power dissipation:	250mW
Manufacturer:	NXP
Current gain factor:	100
Case:	SOT23
Cutoff frequency:	180MHz
Max. collector current:	100mA
Max collector-emmiter voltage:	50V
Operating temperature (range):	-65°C ~ 150°C
Transistor type:	PNP

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