PDTA123JT

Symbol Micros: TPDTA123jt

107642

TPDTA123jt

Contractor Symbol:

Case : SOT23

Datasheet

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PNP; 100; 250mW; 50V; 100mA; 180MHz; -65°C ~ 150°C; PDTA123JT,215; PDTA123JT.215;

Parameters

Power dissipation:	250mW
Manufacturer:	NXP
Current gain factor:	100
Case:	SOT23
Cutoff frequency:	180MHz
Max. collector current:	100mA
Max collector-emmiter voltage:	50V

All parameters

Manufacturer:: NXP Manufacturer part number: PDTA123JT RoHS Case style: SOT23t/r Datasheet

In stock:

0 pcs.

Quantity of pcs.	5+	20+	100+	500+	3000+
Net price (EUR)	0,2243	0,1138	0,0689	0,0545	0,0498

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Packaging:
3000 Quantity (multiple: 1)

- +

Manufacturer:: Nexperia Manufacturer part number: PDTA123JT,215 Case style: SOT23  

External warehouse:

105000 pcs.

Quantity of pcs.	9000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,0498

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Packaging:
3000

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Power dissipation:	250mW
Manufacturer:	NXP
Current gain factor:	100
Case:	SOT23
Cutoff frequency:	180MHz
Max. collector current:	100mA
Max collector-emmiter voltage:	50V
Operating temperature (range):	-65°C ~ 150°C
Transistor type:	PNP

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