PDTB113ZT NXP
Symbol Micros:
TPDTB113zt
Case : SOT23-3
PNP 50V 0.5A 250mW
Parameters
| Power dissipation: | 250mW |
| Current gain factor: | 70 |
| Manufacturer: | NXP |
| Case: | SOT23-3 |
| Max. collector current: | 500mA |
| Max collector-emmiter voltage: | 50V |
| Operating temperature (range): | -65°C ~ 150°C |
| Power dissipation: | 250mW |
| Current gain factor: | 70 |
| Manufacturer: | NXP |
| Case: | SOT23-3 |
| Max. collector current: | 500mA |
| Max collector-emmiter voltage: | 50V |
| Operating temperature (range): | -65°C ~ 150°C |
| Transistor type: | PNP |
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