PDTB113ZT NXP

Symbol Micros: TPDTB113zt

104550

TPDTB113zt

Contractor Symbol:

Case : SOT23-3

Datasheet

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PNP 50V 0.5A 250mW

Parameters

Power dissipation:	250mW
Manufacturer:	NXP
Current gain factor:	70
Case:	SOT23-3
Max. collector current:	500mA
Max collector-emmiter voltage:	50V
Operating temperature (range):	-65°C ~ 150°C

All parameters

Manufacturer:: NXP Manufacturer part number: PDTB113ZT RoHS Case style: SOT23-3 t/r Datasheet

In stock:

150 pcs.

Quantity of pcs.	5+	40+	250+	1000+	5000+
Net price (EUR)	0,2214	0,0791	0,0497	0,0429	0,0402

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Packaging:
250 Quantity (multiple: 1)

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• Parameters

Power dissipation:	250mW
Manufacturer:	NXP
Current gain factor:	70
Case:	SOT23-3
Max. collector current:	500mA
Max collector-emmiter voltage:	50V
Operating temperature (range):	-65°C ~ 150°C
Transistor type:	PNP

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