PDTC143ET-QR TO236AB NEXPERIA

Symbol Micros: TPDTC143ET-QR

536683

TPDTC143ET-QR

Contractor Symbol:

Case : TO236AB

Datasheet

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Transistor NPN; 30; 250mW, 50V; 100mA; 230MHz, -65°C ~ 150°C;

Parameters

Power dissipation:	250mW
Manufacturer:	NXP
Case:	TO236AB
Current gain factor:	30
Cutoff frequency:	230MHz
Max. collector current:	100mA
Max collector-emmiter voltage:	50V

All parameters

         

 

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• Parameters

Power dissipation:	250mW
Manufacturer:	NXP
Case:	TO236AB
Current gain factor:	30
Cutoff frequency:	230MHz
Max. collector current:	100mA
Max collector-emmiter voltage:	50V
Operating temperature (range):	-65°C ~ 150°C
Transistor type:	NPN

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