PDTD113ZT smd

Symbol Micros: TPDTD113zt

27407

TPDTD113zt

Contractor Symbol:

Case : SOT23

Datasheet

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NPN 50V 500mA 250mW +res. 1k+10k

Parameters

Power dissipation:	250mW
Manufacturer:	NXP
Current gain factor:	70
Case:	SOT23
Max. collector current:	500mA
Max collector-emmiter voltage:	50V
Operating temperature (range):	-65°C ~ 150°C

All parameters

Manufacturer:: NXP Manufacturer part number: PDTD113ZT RoHS Case style: SOT23t/r Datasheet

In stock:

1510 pcs.

Quantity of pcs.	5+	20+	100+	500+	2510+
Net price (EUR)	0,1277	0,0584	0,0317	0,0236	0,0213

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Packaging:
2510 Quantity (multiple: 1)

- +

• Parameters

Power dissipation:	250mW
Manufacturer:	NXP
Current gain factor:	70
Case:	SOT23
Max. collector current:	500mA
Max collector-emmiter voltage:	50V
Operating temperature (range):	-65°C ~ 150°C
Transistor type:	NPN

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