PDTD123YT-QR NEXPERIA

Symbol Micros: TPDTD123YT-QR

531284

TPDTD123YT-QR

Contractor Symbol:

Case : SOT23

Datasheet

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Transistor NPN; 70; 250mW, 50V; 500mA; 1MHz, -65°C ~ 150°C;

Parameters

Power dissipation:	250mW
Manufacturer:	NXP
Case:	SOT23
Current gain factor:	70
Cutoff frequency:	1MHz
Max. collector current:	500mA
Max collector-emmiter voltage:	50V

All parameters

Manufacturer:: NXP Manufacturer part number: PDTD123YT-QR RoHS Case style: SOT23t/r Datasheet

In stock:

3000 pcs.

Quantity of pcs.	5+	20+	100+	500+	3000+
Net price (EUR)	0,2613	0,1325	0,0803	0,0637	0,0581

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Packaging:
3000 Quantity (multiple: 1)

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• Parameters

Power dissipation:	250mW
Manufacturer:	NXP
Case:	SOT23
Current gain factor:	70
Cutoff frequency:	1MHz
Max. collector current:	500mA
Max collector-emmiter voltage:	50V
Operating temperature (range):	-65°C ~ 150°C
Transistor type:	NPN

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