PEMD9

Symbol Micros: TPEMD9

233138

TPEMD9

Contractor Symbol:

Case : SOT666

Datasheet

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NPN/PNP 100mA 50V 300mW 230/180MHz +res. 10k+47k PEMD9,115, PEMD9,315

Parameters

Power dissipation:	300mW
Manufacturer:	NXP
Current gain factor:	100
Case:	SOT666
Cutoff frequency:	230MHz
Max. collector current:	100mA
Max collector-emmiter voltage:	50V

All parameters

         

 

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• Parameters

Power dissipation:	300mW
Manufacturer:	NXP
Current gain factor:	100
Case:	SOT666
Cutoff frequency:	230MHz
Max. collector current:	100mA
Max collector-emmiter voltage:	50V
Operating temperature (range):	-65°C ~ 150°C
Transistor type:	NPN/PNP

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