PMBF170

Symbol Micros: TPMBF170
Contractor Symbol:
Case : SOT23
N-MOSFET 300mA 60V 830mW
Parameters
Open channel resistance: 9,25Ohm
Max. drain current: 300mA
Max. power loss: 830mW
Case: SOT23
Manufacturer: NXP
Max. drain-source voltage: 60V
Max. drain-gate voltage: 60V
         
 
Item available on request
Open channel resistance: 9,25Ohm
Max. drain current: 300mA
Max. power loss: 830mW
Case: SOT23
Manufacturer: NXP
Max. drain-source voltage: 60V
Max. drain-gate voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -65°C ~ 150°C
Mounting: SMD