PMGD280UN NEXPERIA
Symbol Micros:
TPMGD280un
Case : SOT363
Transistor: N-MOSFET x2; unipolarny; 20V; 0,55A; 400mW; SOT363; PMGD280UN,115
Parameters
| Open channel resistance: | 340mOhm |
| Max. drain current: | 550mA |
| Max. power loss: | 400mW |
| Case: | SOT363 |
| Manufacturer: | NXP |
| Max. drain-source voltage: | 20V |
| Max. drain-gate voltage: | 20V |
Manufacturer:: NXP
Manufacturer part number: PMGD280UN,115 RoHS
Case style: SOT363 t/r
Datasheet
In stock:
1 pcs.
| Quantity of pcs. | 3+ | 20+ | 100+ | 300+ | 1000+ |
|---|---|---|---|---|---|
| Net price (EUR) | 0,4440 | 0,2443 | 0,1927 | 0,1783 | 0,1710 |
Manufacturer:: Nexperia
Manufacturer part number: PMGD280UN,115
Case style: SOT363
External warehouse:
45000 pcs.
| Quantity of pcs. | 3000+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,1710 |
Manufacturer:: Nexperia
Manufacturer part number: PMGD280UN,115
Case style: SOT363
External warehouse:
6000 pcs.
| Quantity of pcs. | 3000+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,1710 |
| Open channel resistance: | 340mOhm |
| Max. drain current: | 550mA |
| Max. power loss: | 400mW |
| Case: | SOT363 |
| Manufacturer: | NXP |
| Max. drain-source voltage: | 20V |
| Max. drain-gate voltage: | 20V |
| Transistor type: | MOSFET |
| Max. gate-source Voltage: | 8V |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | SMD |
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