PMGD400UN SOT363

Symbol Micros: TPMGD400un

87749

TPMGD400un

Contractor Symbol:

Case : SOT363

Datasheet

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2N-MOSFET 710mA 30V 410mW Obsolete

Parameters

Open channel resistance:	830mOhm
Max. drain current:	710mA
Max. power loss:	410mW
Case:	SOT363
Manufacturer:	NXP
Max. drain-source voltage:	30V
Max. drain-gate voltage:	30V

All parameters

Manufacturer:: NXP Manufacturer part number: PMGD400UN RoHS Case style: SOT363 t/r  

In stock:

504 pcs.

Quantity of pcs.	3+	20+	100+	500+	2000+
Net price (EUR)	0,3522	0,1955	0,1544	0,1402	0,1357

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Packaging:
500 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	830mOhm
Max. drain current:	710mA
Max. power loss:	410mW
Case:	SOT363
Manufacturer:	NXP
Max. drain-source voltage:	30V
Max. drain-gate voltage:	30V
Transistor type:	2xN-MOSFET
Max. gate-source Voltage:	8V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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