PMGD400UN SOT363

Symbol Micros: TPMGD400un
Contractor Symbol:
Case : SOT363
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2N-MOSFET 710mA 30V 410mW Obsolete
Parameters
Open channel resistance: 830mOhm
Max. drain current: 710mA
Max. power loss: 410mW
Case: SOT363
Manufacturer: NXP
Max. drain-source voltage: 30V
Max. drain-gate voltage: 30V
Manufacturer:: NXP Manufacturer part number: PMGD400UN RoHS Case style: SOT363 t/r  
In stock:
504 pcs.
Quantity of pcs. 3+ 20+ 100+ 500+ 2000+
Net price (EUR) 0,4133 0,2286 0,1806 0,1639 0,1586
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Packaging:
500
Open channel resistance: 830mOhm
Max. drain current: 710mA
Max. power loss: 410mW
Case: SOT363
Manufacturer: NXP
Max. drain-source voltage: 30V
Max. drain-gate voltage: 30V
Transistor type: 2xN-MOSFET
Max. gate-source Voltage: 8V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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