PMH600UNEH

Symbol Micros: TPMH600UNEH

358799

TPMH600UNEH

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Case : SOT883

Datasheet

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Transistor N-Channel MOSFET; 20V; 8V; 620mOhm; 800mA; 2,2W; -55°C~150°C;

Parameters

Open channel resistance:	620mOhm
Max. drain current:	800mA
Max. power loss:	2,2W
Case:	DFN03
Manufacturer:	NXP
Max. drain-source voltage:	20V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	620mOhm
Max. drain current:	800mA
Max. power loss:	2,2W
Case:	DFN03
Manufacturer:	NXP
Max. drain-source voltage:	20V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	8V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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