PMH950UPEH

Symbol Micros: TPMH950UPEH

358800

TPMH950UPEH

Contractor Symbol:

Case : SOT883

Datasheet

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Transistor P-MOSFET; 20V; 8V; 5,5Ohm; 530mA; 625mW; -55°C~150°C;

Parameters

Open channel resistance:	5,5Ohm
Max. drain current:	530mA
Max. power loss:	625mW
Manufacturer:	NXP
Max. drain-source voltage:	20V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	8V

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• Parameters

Open channel resistance:	5,5Ohm
Max. drain current:	530mA
Max. power loss:	625mW
Manufacturer:	NXP
Max. drain-source voltage:	20V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	8V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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