PMV30ENEAR 

Symbol Micros: TPMV30ENEAR

394545

TPMV30ENEAR

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Case : TO236AB

Datasheet

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PMV30ENEA/SOT23/TO-236AB Transistors - FETs, MOSFETs - Single

Parameters

Open channel resistance:	30mOhm
Max. drain current:	4,8A
Max. power loss:	710mW
Case:	TO236AB
Manufacturer:	NXP
Max. drain-source voltage:	40V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	30mOhm
Max. drain current:	4,8A
Max. power loss:	710mW
Case:	TO236AB
Manufacturer:	NXP
Max. drain-source voltage:	40V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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