PMXB56ENZ

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TPMXB56e

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Trans MOSFET N-CH 30V 3.2A 3-Pin DFN-D EP

Parameters

Open channel resistance:	55mOhm
Max. power loss:	400mW
Max. drain current:	3,2A
Case:	DFN1010D-3
Manufacturer:	NXP
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	55mOhm
Max. power loss:	400mW
Max. drain current:	3,2A
Case:	DFN1010D-3
Manufacturer:	NXP
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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