PSMN057-200B

Symbol Micros: TPSMN057-200b

78921

TPSMN057-200b

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

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N-MOSFET 39A 200V 250W 0.057Ω

Parameters

Open channel resistance:	165mOhm
Max. drain current:	39A
Max. power loss:	250W
Case:	TO263 (D2PAK)
Manufacturer:	NXP
Max. drain-source voltage:	200V
Max. drain-gate voltage:	200V

All parameters

Manufacturer:: NXP Manufacturer part number: PSMN057-200B RoHS Case style: TO263t/r (D2PAK) Datasheet

In stock:

20 pcs.

Quantity of pcs.	1+	5+	20+	100+	300+
Net price (EUR)	2,0231	1,6058	1,4511	1,3737	1,3480

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Packaging:
20 Quantity (multiple: 1)

- +

Manufacturer:: Nexperia Manufacturer part number: PSMN057-200B,118 Case style: TO263 (D2PAK)  

External warehouse:

4800 pcs.

Quantity of pcs.	800+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	1,3480

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Packaging:
800

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	165mOhm
Max. drain current:	39A
Max. power loss:	250W
Case:	TO263 (D2PAK)
Manufacturer:	NXP
Max. drain-source voltage:	200V
Max. drain-gate voltage:	200V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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