PSMN1R2-25YLC

Symbol Micros: TPSMN1r2-25ylc

80605

TPSMN1r2-25ylc

Contractor Symbol:

Case : LFPAK

Datasheet

Technical drawing Add to favourites

N-MOSFET 100A 25V 179W 0.0013Ω

Parameters

Open channel resistance:	2,75mOhm
Max. drain current:	100A
Max. power loss:	179W
Case:	LFPAK
Manufacturer:	NXP
Max. drain-source voltage:	25V
Max. drain-gate voltage:	25V

All parameters

Manufacturer:: NXP Manufacturer part number: PSMN1R2-25YLC RoHS 1C225L Case style: LFPAK Datasheet

In stock:

29 pcs.

Quantity of pcs.	1+	3+	10+	49+	196+
Net price (EUR)	1,2021	0,8823	0,7073	0,6069	0,5719

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Packaging:
49 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	2,75mOhm
Max. drain current:	100A
Max. power loss:	179W
Case:	LFPAK
Manufacturer:	NXP
Max. drain-source voltage:	25V
Max. drain-gate voltage:	25V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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