PSMN3R7-100BSE NEXPERIA

Symbol Micros: TPSMN3r7-100bse

271098

TPSMN3r7-100bse

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

Technical drawing Add to favourites

Transistor MOSFET, TN-channel 100 V, 3.95 mOhm, D2PAK

Parameters

Open channel resistance:	10,7mOhm
Max. drain current:	120A
Max. power loss:	405W
Case:	TO263 (D2PAK)
Manufacturer:	NXP
Max. drain-source voltage:	100V
Max. drain-gate voltage:	100V

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• Parameters

Open channel resistance:	10,7mOhm
Max. drain current:	120A
Max. power loss:	405W
Case:	TO263 (D2PAK)
Manufacturer:	NXP
Max. drain-source voltage:	100V
Max. drain-gate voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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