PSMN3R9-100YSFX

Symbol Micros: TPSMN3R9-100ysfx

349077

TPSMN3R9-100ysfx

Contractor Symbol:

Case : LFPAK

Datasheet

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Trans MOSFET N-CH 100V 120A 5-Pin(4+Tab) LFPAK

Parameters

Open channel resistance:	4,3mOhm
Max. drain current:	120A
Max. power loss:	294W
Case:	LFPAK
Manufacturer:	NXP
Max. drain-source voltage:	100V
Max. drain-gate voltage:	100V

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• Parameters

Open channel resistance:	4,3mOhm
Max. drain current:	120A
Max. power loss:	294W
Case:	LFPAK
Manufacturer:	NXP
Max. drain-source voltage:	100V
Max. drain-gate voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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