PSMN4R2-80YSEX Nexperia USA Inc.

Symbol Micros: TPSMN4R2-80YSEX

394632

TPSMN4R2-80YSEX

Contractor Symbol:

Case : LFPAK56 (SOT669)

Datasheet

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PSMN4R2-80YSE/SOT1023/4 LEADS Transistors - FETs, MOSFETs - Single

Parameters

Open channel resistance:	4,2mOhm
Max. drain current:	170A
Max. power loss:	294W
Case:	LFPAK56E
Manufacturer:	NXP
Max. drain-source voltage:	80V
Max. drain-gate voltage:	80V

All parameters

Manufacturer:: Nexperia Manufacturer part number: PSMN4R2-80YSEX Case style: LFPAK56 (SOT669)  

External warehouse:

1500 pcs.

Quantity of pcs.	1500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	1,2288

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Packaging:
1500

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	4,2mOhm
Max. drain current:	170A
Max. power loss:	294W
Case:	LFPAK56E
Manufacturer:	NXP
Max. drain-source voltage:	80V
Max. drain-gate voltage:	80V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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