PSMN4R2-80YSEX Nexperia USA Inc.

Symbol Micros: TPSMN4R2-80YSEX

394632

TPSMN4R2-80YSEX

Contractor Symbol:

Case : LFPAK56 (SOT669)

Datasheet

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PSMN4R2-80YSE/SOT1023/4 LEADS Transistors - FETs, MOSFETs - Single

Parameters

Open channel resistance:	4,2mOhm
Max. drain current:	170A
Max. power loss:	294W
Case:	LFPAK56E
Manufacturer:	NXP
Max. drain-source voltage:	80V
Max. drain-gate voltage:	80V

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• Parameters

Open channel resistance:	4,2mOhm
Max. drain current:	170A
Max. power loss:	294W
Case:	LFPAK56E
Manufacturer:	NXP
Max. drain-source voltage:	80V
Max. drain-gate voltage:	80V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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