PSMN8R7-100YSFX

Symbol Micros: TPSMN8r7-100ysfx

231695

TPSMN8r7-100ysfx

Contractor Symbol:

Case : LFPAK

Datasheet

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NextPower 100 V, 9 mohm N-channel MOSFET in LFPAK56

Parameters

Open channel resistance:	9mOhm
Max. drain current:	90A
Max. power loss:	198W
Case:	LFPAK56 (SOT669)
Manufacturer:	NXP
Max. drain-source voltage:	100V
Max. gate-source Voltage:	20V

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• Parameters

Open channel resistance:	9mOhm
Max. drain current:	90A
Max. power loss:	198W
Case:	LFPAK56 (SOT669)
Manufacturer:	NXP
Max. drain-source voltage:	100V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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