R6011KNX Rohm Semiconductor

Symbol Micros: TR6011knx
Contractor Symbol:
Case : TO220FP
MOSFET N-CH 600V 11A TO220FM TO-220-3 Full Pack
Parameters
Open channel resistance: 720mOhm
Max. drain current: 11A
Max. power loss: 53W
Case: TO220FP
Manufacturer: ROHM
Max. drain-source voltage: 600V
Transistor type: N-MOSFET
Manufacturer:: ROHM - Japan Manufacturer part number: R6011KNX RoHS Case style: TO220FP Datasheet
In stock:
10 pcs.
Quantity of pcs. 1+ 3+ 10+ 30+ 100+
Net price (EUR) 2,1263 1,7301 1,5027 1,3925 1,3292
Add to comparison tool
Packaging:
10
Open channel resistance: 720mOhm
Max. drain current: 11A
Max. power loss: 53W
Case: TO220FP
Manufacturer: ROHM
Max. drain-source voltage: 600V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT