RD3G03BATTL1

Symbol Micros: TRD3G03BATTL1

348571

TRD3G03BATTL1

Contractor Symbol:

Case : TO-252 (D-PAK)

Datasheet

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Transistor P-Channel MOSFET; 40V; 20V; 19,1mOhm; 35A; 56W; -55°C~150°C;

Parameters

Open channel resistance:	19,1mOhm
Max. drain current:	35A
Max. power loss:	56W
Case:	TO-252
Manufacturer:	ROHM
Max. drain-source voltage:	40V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: ROHM - Japan Manufacturer part number: RD3G03BATTL1 RoHS Case style: TO-252 (D-PAK) Datasheet

In stock:

10 pcs.

Quantity of pcs.	1+	3+	10+	30+	100+
Net price (EUR)	1,7245	1,3673	1,1638	1,0692	1,0148

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Packaging:
10 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	19,1mOhm
Max. drain current:	35A
Max. power loss:	56W
Case:	TO-252
Manufacturer:	ROHM
Max. drain-source voltage:	40V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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