RFD3055LE

Symbol Micros: TRFD3055le

53274

TRFD3055le

Contractor Symbol:

Case : TO251 (IPACK)

Datasheet

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N-MOSFET 11A 60V 38W 107mOhm

Parameters

Open channel resistance:	107mOhm
Max. drain current:	11A
Max. power loss:	38W
Case:	TO251 (IPACK)
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	60V
Max. drain-gate voltage:	60V

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• Parameters

Open channel resistance:	107mOhm
Max. drain current:	11A
Max. power loss:	38W
Case:	TO251 (IPACK)
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	60V
Max. drain-gate voltage:	60V
Max. gate-source Voltage:	16V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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