RQ3E100BNTB Rohm Semiconductor

Symbol Micros: TRQ3e100bntb

247022

TRQ3e100bntb

Contractor Symbol:

Case : HSMT8 (3.2x3)

Datasheet

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MOSFET N-CH 30V 10A HSMT8 8-PowerVDFN

Parameters

Open channel resistance:	15,3mOhm
Max. drain current:	10A
Max. power loss:	15W
Case:	HSMT8
Manufacturer:	ROHM
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	15,3mOhm
Max. drain current:	10A
Max. power loss:	15W
Case:	HSMT8
Manufacturer:	ROHM
Max. drain-source voltage:	30V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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