RQ3L070ATTB

Symbol Micros: TRQ3L070ATTB

359834

TRQ3L070ATTB

Contractor Symbol:

Case : HSMT8 (3.2x3)

Datasheet

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PCH -60V -25A, HSMT8, POWER MOSF Transistors - FETs, MOSFETs - Single

Parameters

Open channel resistance:	32mOhm
Max. drain current:	25A
Max. power loss:	20W
Case:	HSMT8
Manufacturer:	ROHM Semiconductor
Max. drain-source voltage:	60V
Max. gate-source Voltage:	20V

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• Parameters

Open channel resistance:	32mOhm
Max. drain current:	25A
Max. power loss:	20W
Case:	HSMT8
Manufacturer:	ROHM Semiconductor
Max. drain-source voltage:	60V
Max. gate-source Voltage:	20V
Transistor type:	P-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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