RV8L002SNHZGG2CR DFN1010-3W ROHM

Symbol Micros: TRV8L002SNHZGG2CR

399722

TRV8L002SNHZGG2CR

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Case : DFN1010-3W

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N-Channel 60 V 250mA (Ta) 1W (Ta) Surface Mount DFN1010-3W

Parameters

Open channel resistance:	3Ohm
Max. drain current:	250mA
Max. power loss:	1W
Case:	DFN1010-3W
Manufacturer:	ROHM
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	3Ohm
Max. drain current:	250mA
Max. power loss:	1W
Case:	DFN1010-3W
Manufacturer:	ROHM
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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