SCT040H65G3AG STMicroelectronics
Symbol Micros:
TSCT040H65G3AG
Case :
AUTOMOTIVE-GRADE SILICON CARBIDE Transistors - FETs, MOSFETs - Single
Parameters
| Open channel resistance: | 55mOhm |
| Max. drain current: | 30A |
| Max. power loss: | 221W |
| Case: | H2PAK-7 |
| Manufacturer: | ST |
| Max. drain-source voltage: | 650V |
| Transistor type: | N-MOSFET |
Manufacturer:: ST
Manufacturer part number: SCT040H65G3AG
Case style:
External warehouse:
1000 pcs.
| Quantity of pcs. | 1000+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 6,6860 |
Manufacturer:: ST
Manufacturer part number: SCT040H65G3AG
Case style:
External warehouse:
1000 pcs.
| Quantity of pcs. | 1000+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 6,9518 |
Manufacturer:: ST
Manufacturer part number: SCT040H65G3AG
Case style:
External warehouse:
4000 pcs.
| Quantity of pcs. | 1000+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 6,4422 |
| Open channel resistance: | 55mOhm |
| Max. drain current: | 30A |
| Max. power loss: | 221W |
| Case: | H2PAK-7 |
| Manufacturer: | ST |
| Max. drain-source voltage: | 650V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 22V |
| Operating temperature (range): | -55°C ~ 175°C |
| Mounting: | SMD |
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