SCT040H65G3AG STMicroelectronics

Symbol Micros: TSCT040H65G3AG

395143

TSCT040H65G3AG

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Datasheet

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AUTOMOTIVE-GRADE SILICON CARBIDE Transistors - FETs, MOSFETs - Single

Parameters

Open channel resistance:	55mOhm
Max. drain current:	30A
Max. power loss:	221W
Case:	H2PAK-7
Manufacturer:	ST
Max. drain-source voltage:	650V
Max. gate-source Voltage:	22V

All parameters

Manufacturer:: ST Manufacturer part number: SCT040H65G3AG Case style:    

External warehouse:

1000 pcs.

Quantity of pcs.	1000+ (Please wait for the order confirmation)
Net price (EUR)	5,5791

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Packaging:
1000

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Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	55mOhm
Max. drain current:	30A
Max. power loss:	221W
Case:	H2PAK-7
Manufacturer:	ST
Max. drain-source voltage:	650V
Max. gate-source Voltage:	22V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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