SCT3060ALGC11

Symbol Micros: TSCT3060algc11

231512

TSCT3060algc11

Contractor Symbol:

Case : TO247

Datasheet

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SiC-N-Ch 650V 39A 165W 0,078R TO247 SCT3060ALGC11 : Rohm

Parameters

Open channel resistance:	78mOhm
Max. drain current:	39A
Max. power loss:	165W
Case:	TO247
Manufacturer:	ROHM
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: ROHM - Japan Manufacturer part number: SCT3060ALGC11 RoHS Case style: TO247 Datasheet

In stock:

2 pcs.

Quantity of pcs.	1+	2+	4+	10+	20+
Net price (EUR)	15,4252	14,9145	14,5434	14,2030	14,0233

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Packaging:
2 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	78mOhm
Max. drain current:	39A
Max. power loss:	165W
Case:	TO247
Manufacturer:	ROHM
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	22V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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