SCT3080ALGC11
Symbol Micros:
TSCT3080algc11
Case : TO247
SiC-N-Ch 650V 30A 134W 0,104R TO247 SCT3080ALGC11 : Rohm
Parameters
| Open channel resistance: | 104mOhm |
| Max. drain current: | 30A |
| Max. power loss: | 134W |
| Case: | TO247 |
| Manufacturer: | ROHM |
| Max. drain-source voltage: | 650V |
| Transistor type: | N-MOSFET |
| Open channel resistance: | 104mOhm |
| Max. drain current: | 30A |
| Max. power loss: | 134W |
| Case: | TO247 |
| Manufacturer: | ROHM |
| Max. drain-source voltage: | 650V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 22V |
| Operating temperature (range): | -55°C ~ 175°C |
| Mounting: | THT |
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