SCT3080KLGC11

Symbol Micros: TSCT3080klgc11
Contractor Symbol:
Case : TO247
SiC-N-Ch 1200V 31A 165W 0,104T TO247 SCT3080KLGC11 : Rohm
Parameters
Open channel resistance: 104mOhm
Max. drain current: 31A
Max. power loss: 165W
Case: TO247
Manufacturer: ROHM
Max. drain-source voltage: 1200V
Transistor type: N-MOSFET
Manufacturer:: ROHM - Japan Manufacturer part number: SCT3080KLGC11 RoHS Case style: TO247 Datasheet
In stock:
2 pcs.
Quantity of pcs. 1+ 2+ 4+ 10+ 20+
Net price (EUR) 15,2485 14,7440 14,3756 14,0376 13,8616
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Packaging:
2
Manufacturer:: ROHM - Japan Manufacturer part number: SCT3080KLGC11 Case style: TO247  
External warehouse:
30 pcs.
Quantity of pcs. 30+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 13,8616
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Packaging:
30
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ROHM - Japan Manufacturer part number: SCT3080KLGC11 Case style: TO247  
External warehouse:
295 pcs.
Quantity of pcs. 1+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 13,8616
Add to comparison tool
Packaging:
1
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 104mOhm
Max. drain current: 31A
Max. power loss: 165W
Case: TO247
Manufacturer: ROHM
Max. drain-source voltage: 1200V
Transistor type: N-MOSFET
Max. gate-source Voltage: 22V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT