SGT40N60FD2PN TO-3P SILAN
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TSGT40N60FD2PN SIL
Case : TO 3P
Transistor IGBT ; 600V; 20V; 80A; 120A; 380W; 4,0V~6,5V; 100nC; -55°C~150°C;
Parameters
| Gate charge: | 100nC |
| Max. dissipated power: | 380W |
| Max collector current (impulse): | 120A |
| Max. collector current: | 80A |
| Forvard volatge [Vgeth]: | 4,0V ~ 6,5V |
| Case: | TO 3P |
| Manufacturer: | SILAN |
| Gate charge: | 100nC |
| Max. dissipated power: | 380W |
| Max collector current (impulse): | 120A |
| Max. collector current: | 80A |
| Forvard volatge [Vgeth]: | 4,0V ~ 6,5V |
| Case: | TO 3P |
| Manufacturer: | SILAN |
| Operating temperature (range): | -55°C ~ 150°C |
| Collector-emitter voltage: | 600V |
| Gate-emitter voltage: | 20V |
| Mounting: | THT |
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