SI1012CR-T1-GE3 VISHAY

Symbol Micros: TSI1012cr

200320

TSI1012cr

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Case : SC75-3 (SOT416)

Datasheet

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Transistor N-Channel MOSFET; 20V; 8V; 1,1Ohm; 630mA; 240mW; -55°C ~ 150°C; SI1012CR-T1-GE3

Parameters

Open channel resistance:	1,1Ohm
Max. drain current:	630mA
Max. power loss:	240mW
Case:	SC75-3 (SOT416)
Manufacturer:	VISHAY
Max. drain-source voltage:	20V
Max. gate-source Voltage:	8V

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Estimated date:
2027-12-30

Quantity of pcs.: 3000

• Parameters

Open channel resistance:	1,1Ohm
Max. drain current:	630mA
Max. power loss:	240mW
Case:	SC75-3 (SOT416)
Manufacturer:	VISHAY
Max. drain-source voltage:	20V
Max. gate-source Voltage:	8V
Transistor type:	P-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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