SI1902CDL-T1 Vishay

Symbol Micros: TSI1902cdl

98519

TSI1902cdl

Contractor Symbol:

Case : SC70-6

Datasheet

Technical drawing Add to favourites

2N-MOSFET 20V 1.1A 235mΩ 420mW

Parameters

Open channel resistance:	235mOhm
Max. drain current:	1,1A
Max. power loss:	420mW
Case:	SC70-6
Manufacturer:	VISHAY
Max. drain-source voltage:	20V
Max. drain-gate voltage:	20V

All parameters

Manufacturer:: Vishay Manufacturer part number: SI1902CDL-T1-GE3 Case style: SC70-6  

External warehouse:

6000 pcs.

Quantity of pcs.	3000+ (Please wait for the order confirmation)
Net price (EUR)	0,1039

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Packaging:
3000

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Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	235mOhm
Max. drain current:	1,1A
Max. power loss:	420mW
Case:	SC70-6
Manufacturer:	VISHAY
Max. drain-source voltage:	20V
Max. drain-gate voltage:	20V
Max. gate-source Voltage:	12V
Transistor type:	2xN-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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