SI1902DL-T1-E3
Symbol Micros:
TSI1902dl
Case : SC70-6
2N-MOSFET 20V 660mA 270mW
Parameters
| Open channel resistance: | 630mOhm |
| Max. drain current: | 660mA |
| Max. power loss: | 270mW |
| Case: | SC70-6 |
| Manufacturer: | VISHAY |
| Max. drain-source voltage: | 20V |
| Transistor type: | 2xN-MOSFET |
| Open channel resistance: | 630mOhm |
| Max. drain current: | 660mA |
| Max. power loss: | 270mW |
| Case: | SC70-6 |
| Manufacturer: | VISHAY |
| Max. drain-source voltage: | 20V |
| Transistor type: | 2xN-MOSFET |
| Max. gate-source Voltage: | 12V |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | SMD |
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