SI2301S SOT23 BORN
Symbol Micros:
TSI2301s BORN
Case : SOT23
P-Channel -20V 2.3A 1V @ 250uA 210m? @ 1A,2.5V 1W SOT-23 MOSFETs RoHS
Parameters
| Open channel resistance: | 210mOhm |
| Max. drain current: | 2,3A |
| Max. power loss: | 1W |
| Case: | SOT23 |
| Manufacturer: | BORN |
| Max. drain-source voltage: | 20V |
| Transistor type: | P-MOSFET |
| Open channel resistance: | 210mOhm |
| Max. drain current: | 2,3A |
| Max. power loss: | 1W |
| Case: | SOT23 |
| Manufacturer: | BORN |
| Max. drain-source voltage: | 20V |
| Transistor type: | P-MOSFET |
| Max. gate-source Voltage: | 10V |
| Operating temperature (range): | -50°C ~ 150°C |
| Mounting: | SMD |
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