SI2302CDS

Symbol Micros: TSI2302cds

200381

TSI2302cds

Contractor Symbol:

Case : SOT23-3

Datasheet

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Tranzystor N-MOSFET; 20V; 8V; 75mOhm; 2,6A; 710mW; -55°C ~ 150°C; Odpowiednik: SI2302CDS-T1-GE3; SI2302CDS-T1;

Parameters

Open channel resistance:	75mOhm
Max. drain current:	2,6A
Max. power loss:	710mW
Case:	SOT23-3
Manufacturer:	VISHAY
Max. drain-source voltage:	20V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Vishay Manufacturer part number: SI2302CDS-T1-GE3 RoHS Case style: SOT23-3 t/r Datasheet

In stock:

800 pcs.

Quantity of pcs.	3+	20+	100+	300+	1000+
Net price (EUR)	0,3387	0,1871	0,1472	0,1362	0,1306

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Packaging:
1000 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	75mOhm
Max. drain current:	2,6A
Max. power loss:	710mW
Case:	SOT23-3
Manufacturer:	VISHAY
Max. drain-source voltage:	20V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	8V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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