SI2302CDS

Symbol Micros: TSI2302cds
Contractor Symbol:
Case : SOT23-3
Tranzystor N-MOSFET; 20V; 8V; 75mOhm; 2,6A; 710mW; -55°C ~ 150°C; Odpowiednik: SI2302CDS-T1-GE3; SI2302CDS-T1;
Parameters
Open channel resistance: 75mOhm
Max. drain current: 2,6A
Max. power loss: 710mW
Case: SOT23-3
Manufacturer: VISHAY
Max. drain-source voltage: 20V
Transistor type: N-MOSFET
Manufacturer:: Vishay Manufacturer part number: SI2302CDS-T1-GE3 RoHS Case style: SOT23-3 t/r Datasheet
In stock:
800 pcs.
Quantity of pcs. 3+ 20+ 100+ 300+ 1000+
Net price (EUR) 0,3418 0,1888 0,1485 0,1374 0,1318
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Packaging:
1000
Manufacturer:: Vishay Manufacturer part number: SI2302CDS-T1-GE3 Case style: SOT23-3  
External warehouse:
225000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,1318
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Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Vishay Manufacturer part number: SI2302CDS-T1-GE3 Case style: SOT23-3  
External warehouse:
18000 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,1318
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 75mOhm
Max. drain current: 2,6A
Max. power loss: 710mW
Case: SOT23-3
Manufacturer: VISHAY
Max. drain-source voltage: 20V
Transistor type: N-MOSFET
Max. gate-source Voltage: 8V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD