SI2305 SOT23 MDD

Symbol Micros: TSI2305 MDD

354985

TSI2305 MDD

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Case : SOT23-3

Datasheet

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Transistor P-Channel MOSFET; 20V; 10V; 60mOhm; 4,2A; 1,25W; -55°C~150°C; MDD2305;

Parameters

Open channel resistance:	60mOhm
Max. drain current:	4,2A
Max. power loss:	1,25W
Case:	SOT23-3
Manufacturer:	MDD
Max. drain-source voltage:	20V
Max. drain-gate voltage:	4,5V

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• Parameters

Open channel resistance:	60mOhm
Max. drain current:	4,2A
Max. power loss:	1,25W
Case:	SOT23-3
Manufacturer:	MDD
Max. drain-source voltage:	20V
Max. drain-gate voltage:	4,5V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	10V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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