SI2305CDS Vishay

Symbol Micros: TSI2305cds

94300

TSI2305cds

Contractor Symbol:

Case : SOT23

Datasheet

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Transistor P-MOSFET; 8V; 8V; 65mOhm; 5,8A; 1,7W; -55°C ~ 150°C; Odpowiednik: SI2305CDST1GE3; SI2305CDS-T1-GE3; SI2305DS; SI2305-TP; SI2305CDS-T1-BE3; KSI2305CDS-T1-GE3;

Parameters

Open channel resistance:	65mOhm
Max. power loss:	1,7W
Max. drain current:	5,8A
Case:	SOT23
Manufacturer:	VISHAY
Max. drain-source voltage:	8V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: Vishay Manufacturer part number: SI2305CDS-T1-GE3 RoHS Case style: SOT23t/r Datasheet

In stock:

1000 pcs.

Quantity of pcs.	3+	20+	100+	300+	1000+
Net price (EUR)	0,2856	0,1521	0,1180	0,1089	0,1043

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Packaging:
1000 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	65mOhm
Max. power loss:	1,7W
Max. drain current:	5,8A
Case:	SOT23
Manufacturer:	VISHAY
Max. drain-source voltage:	8V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	8V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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