SI2305CDS-T1-GE3

Symbol Micros: TSI2305cds VBS

354989

TSI2305cds VBS

Contractor Symbol:

Case : SOT23-3

Datasheet

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Transistor P-Channel MOSFET; 20V; 12V; 88Ohm; 5A; 2,5W; -55°C~150°C;

Parameters

Open channel resistance:	88Ohm
Max. drain current:	5A
Max. power loss:	2,5W
Case:	SOT23-3
Manufacturer:	VBsemi
Max. drain-source voltage:	20V
Transistor type:	P-MOSFET

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• Parameters

Open channel resistance:	88Ohm
Max. drain current:	5A
Max. power loss:	2,5W
Case:	SOT23-3
Manufacturer:	VBsemi
Max. drain-source voltage:	20V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	12V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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