SI2305DS

Symbol Micros: TSI2305ds

45386

TSI2305ds

Contractor Symbol:

Case : SOT23

Datasheet

Technical drawing Add to favourites

P-MOSFET 3.5A 8V 1.25W 0.052Ω

Parameters

Open channel resistance:	108mOhm
Max. drain current:	3,5A
Max. power loss:	1,25W
Case:	SOT23
Manufacturer:	VISHAY
Max. drain-source voltage:	8V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: Vishay Manufacturer part number: SI2305CDS-T1-GE3 RoHS Case style: SOT23t/r Datasheet

In stock:

151 pcs.

Quantity of pcs.	3+	10+	50+	300+	1500+
Net price (EUR)	0,4386	0,2885	0,2073	0,1776	0,1689

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300 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	108mOhm
Max. drain current:	3,5A
Max. power loss:	1,25W
Case:	SOT23
Manufacturer:	VISHAY
Max. drain-source voltage:	8V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	8V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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