SI2308BDS

Symbol Micros: TSI2308bds

Case : SOT23

Transistor N-MOSFET; 60V; 20V; 192mOhm; 2,3A; 1,66W; -55°C~150°C; Substitute: SI2308BDS-T1-GE3; SI2308BDS-T1-E3; SI2308BDS-T1-GE3CT-ND;

Parameters

Manufacturer:: Siliconix Manufacturer part number: SI2308BDS-T1-GE3 RoHS Case style: SOT23t/r

In stock:

3000 pcs.

Quantity of pcs.	3+	20+	100+	300+	1000+
Net price (EUR)	0,3862	0,2132	0,1676	0,1552	0,1489

Manufacturer:: Vishay Manufacturer part number: SI2308BDS-T1-E3 Case style: SOT23

External warehouse:

13010 pcs.

Quantity of pcs.	3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,1489

Open channel resistance:	192mOhm
Max. drain current:	2,3A
Max. power loss:	1,66W
Case:	SOT23
Manufacturer:	VISHAY
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

Quantity of pcs.	3+	10+	40+	150+	750+
Net price (EUR)	0,2575	0,1636	0,1184	0,1014	0,0934