SI2308BDS

Symbol Micros: TSI2308bds
Contractor Symbol:
Case : SOT23
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Transistor N-MOSFET; 60V; 20V; 192mOhm; 2,3A; 1,66W; -55°C~150°C; Replacement: SI2308BDS-T1-GE3; SI2308BDS-T1-E3; SI2308BDS-T1-GE3CT-ND; SI2308BDS-T1-BE3; TSI2308BDS-T1-BE3;
Parameters
Open channel resistance: 192mOhm
Max. drain current: 2,3A
Max. power loss: 1,66W
Case: SOT23
Manufacturer: VISHAY
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Manufacturer:: Siliconix Manufacturer part number: SI2308BDS-T1-GE3 RoHS Case style: SOT23t/r  
In stock:
1000 pcs.
Quantity of pcs. 3+ 20+ 100+ 300+ 1000+
Net price (EUR) 0,3880 0,2142 0,1684 0,1559 0,1496
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Packaging:
3000
         
 
Item in delivery
Estimated date:
2025-11-07
Quantity of pcs.: 3000
Open channel resistance: 192mOhm
Max. drain current: 2,3A
Max. power loss: 1,66W
Case: SOT23
Manufacturer: VISHAY
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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