SI2309CDS-T1-GE3

Symbol Micros: TSI2309cds

97143

TSI2309cds

Contractor Symbol:

Case : SOT23

Datasheet

Technical drawing Add to favourites

Transistor P-MOSFET; 60V; 20V; 450mOhm; 1,6A; 1,7W; -55°C ~ 150°C; Replacement: SI2309CDS-T1-GE3; SI2309CDS-T1-E3; G05P06L; SI2309CDS-T1-GE3; SI2309CDS VISHAY;

Parameters

Open channel resistance:	450mOhm
Max. drain current:	1,6A
Max. power loss:	1,7W
Case:	SOT23
Manufacturer:	VISHAY
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: Vishay Manufacturer part number: SI2309CDS-T1-GE3 RoHS Case style: SOT23t/r Datasheet

In stock:

990 pcs.

Quantity of pcs.	3+	10+	50+	300+	1500+
Net price (EUR)	0,3752	0,2470	0,1774	0,1520	0,1446

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Packaging:
1500 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	450mOhm
Max. drain current:	1,6A
Max. power loss:	1,7W
Case:	SOT23
Manufacturer:	VISHAY
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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