G05P06L

Symbol Micros: TSI2309cds GO

370594

TSI2309cds GO

Contractor Symbol:

Case : SOT23

Datasheet

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Transistor P-MOSFET; 60V; 20V; 17mOhm; 5A; 4,3W; -55°C ~ 150°C; Substitute: SI2309CDS-T1-GE3; SI2309CDS-T1-E3;

Parameters

Open channel resistance:	170mOhm
Max. drain current:	5A
Max. power loss:	4,3W
Case:	SOT23
Manufacturer:	GOFORD
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET

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• Parameters

Open channel resistance:	170mOhm
Max. drain current:	5A
Max. power loss:	4,3W
Case:	SOT23
Manufacturer:	GOFORD
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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