SI2312CDS-T1-GE3  Vishay

Symbol Micros: TSI2312cds

98297

TSI2312cds

Contractor Symbol:

Case : SOT23

Datasheet

Technical drawing Add to favourites

N-MOSFET 20V 6A 31.8mΩ 2.1W

Parameters

Open channel resistance:	41mOhm
Max. drain current:	6A
Max. power loss:	2,1W
Case:	SOT23
Manufacturer:	VISHAY
Max. drain-source voltage:	20V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Vishay Manufacturer part number: SI2312CDS-TI-GE3 RoHS Case style: SOT23t/r Datasheet

In stock:

74 pcs.

Quantity of pcs.	2+	10+	50+	200+	1000+
Net price (EUR)	0,5529	0,3341	0,2564	0,2320	0,2207

Add to comparison tool Add inquiry (RFQ)

Packaging:
200 Quantity (multiple: 1)

- +

• Parameters

Open channel resistance:	41mOhm
Max. drain current:	6A
Max. power loss:	2,1W
Case:	SOT23
Manufacturer:	VISHAY
Max. drain-source voltage:	20V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	8V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

Edit Symbol

Delete associated with Contractor Symbol

Symbol Micros

Are you sure you want to delete your symbols? Your Symbol Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete Delete Delete All Contractor Symbols Save

Add Symbol

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols Save

The provided name is already taken

The symbol contains forbidden characters or is too short. The symbol can consist of upper and lower case letters, spaces, special characters: "-", "/", "." and must have at least 3 characters.