SI2312CDS-T1-GE3  Vishay

Symbol Micros: TSI2312cds

98297

TSI2312cds

Contractor Symbol:

Case : SOT23

Datasheet

Technical drawing Add to favourites

N-MOSFET 20V 6A 31.8mΩ 2.1W

Parameters

Open channel resistance:	41mOhm
Max. drain current:	6A
Max. power loss:	2,1W
Case:	SOT23
Manufacturer:	VISHAY
Max. drain-source voltage:	20V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Vishay Manufacturer part number: SI2312CDS-TI-GE3 RoHS Case style: SOT23t/r Datasheet

In stock:

74 pcs.

Quantity of pcs.	2+	10+	50+	200+	1000+
Net price (EUR)	0,5532	0,3343	0,2566	0,2321	0,2208

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Packaging:
200 Quantity (multiple: 1)

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Manufacturer:: Vishay Manufacturer part number: SI2312CDS-T1-GE3 Case style: SOT23  

External warehouse:

18000 pcs.

Quantity of pcs.	3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,2208

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Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	41mOhm
Max. drain current:	6A
Max. power loss:	2,1W
Case:	SOT23
Manufacturer:	VISHAY
Max. drain-source voltage:	20V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	8V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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