SI2315BDS-T1-E3 Vishay

Symbol Micros: TSI2315bds

97890

TSI2315bds

Contractor Symbol:

Case : SOT23

Datasheet

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P-MOSFET 12V 3A 50mΩ 750mW

Parameters

Open channel resistance:	100mOhm
Max. drain current:	3A
Max. power loss:	750mW
Case:	SOT23
Manufacturer:	VISHAY
Max. drain-source voltage:	12V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: Vishay Manufacturer part number: SI2315BDS-T1-E3 RoHS Case style: SOT23-3 t/r Datasheet

In stock:

140 pcs.

Quantity of pcs.	3+	10+	50+	200+	1000+
Net price (EUR)	0,3515	0,2306	0,1650	0,1444	0,1354

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Packaging:
200 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	100mOhm
Max. drain current:	3A
Max. power loss:	750mW
Case:	SOT23
Manufacturer:	VISHAY
Max. drain-source voltage:	12V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	8V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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