SI2318DS

Symbol Micros: TSI2318ds

83013

TSI2318ds

Contractor Symbol:

Case : SOT23

Datasheet

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Transistor N-Channel MOSFET; 40V; 20V; 58mOhm; 3A; 750mW; -55°C ~ 150°C; SI2318DS-T1-GE3

Parameters

Open channel resistance:	58mOhm
Max. drain current:	3A
Max. power loss:	750mW
Case:	SOT23
Manufacturer:	VISHAY
Max. drain-source voltage:	40V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Vishay Manufacturer part number: SI2318DS-T1-E3 RoHS Case style: SOT23t/r Datasheet

In stock:

90 pcs.

Quantity of pcs.	3+	20+	100+	300+	1000+
Net price (EUR)	0,3752	0,2065	0,1624	0,1503	0,1442

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Packaging:
100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	58mOhm
Max. drain current:	3A
Max. power loss:	750mW
Case:	SOT23
Manufacturer:	VISHAY
Max. drain-source voltage:	40V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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