SI2318DS
Symbol Micros:
TSI2318ds
Case : SOT23
Transistor N-Channel MOSFET; 40V; 20V; 58mOhm; 3A; 750mW; -55°C ~ 150°C; SI2318DS-T1-GE3
Parameters
Open channel resistance: | 58mOhm |
Max. drain current: | 3A |
Max. power loss: | 750mW |
Case: | SOT23 |
Manufacturer: | VISHAY |
Max. drain-source voltage: | 40V |
Transistor type: | N-MOSFET |
Open channel resistance: | 58mOhm |
Max. drain current: | 3A |
Max. power loss: | 750mW |
Case: | SOT23 |
Manufacturer: | VISHAY |
Max. drain-source voltage: | 40V |
Transistor type: | N-MOSFET |
Max. gate-source Voltage: | 20V |
Operating temperature (range): | -55°C ~ 150°C |
Mounting: | SMD |
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