SI2318DS

Symbol Micros: TSI2318ds
Contractor Symbol:
Case : SOT23
Transistor N-Channel MOSFET; 40V; 20V; 58mOhm; 3A; 750mW; -55°C ~ 150°C; SI2318DS-T1-GE3
Parameters
Open channel resistance: 58mOhm
Max. drain current: 3A
Max. power loss: 750mW
Case: SOT23
Manufacturer: VISHAY
Max. drain-source voltage: 40V
Transistor type: N-MOSFET
Manufacturer:: Vishay Manufacturer part number: SI2318DS-T1-E3 RoHS Case style: SOT23t/r Datasheet
In stock:
90 pcs.
Quantity of pcs. 3+ 20+ 100+ 300+ 1000+
Net price (EUR) 0,4403 0,2433 0,1907 0,1766 0,1694
Add to comparison tool
Packaging:
100
Open channel resistance: 58mOhm
Max. drain current: 3A
Max. power loss: 750mW
Case: SOT23
Manufacturer: VISHAY
Max. drain-source voltage: 40V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD