SI2319CDS-T1-GE3 Vishay
Symbol Micros:
TSI2319cds
Case : SOT23
P-MOSFET 40V 4.4A 77mΩ
Parameters
Open channel resistance: | 108mOhm |
Max. drain current: | 4,4A |
Max. power loss: | 2,5W |
Case: | SOT23 |
Manufacturer: | VISHAY |
Max. drain-source voltage: | 40V |
Transistor type: | P-MOSFET |
Open channel resistance: | 108mOhm |
Max. drain current: | 4,4A |
Max. power loss: | 2,5W |
Case: | SOT23 |
Manufacturer: | VISHAY |
Max. drain-source voltage: | 40V |
Transistor type: | P-MOSFET |
Max. gate-source Voltage: | 20V |
Operating temperature (range): | -55°C ~ 150°C |
Mounting: | SMD |
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