SI2319CDS-T1-GE3 Vishay

Symbol Micros: TSI2319cds

115908

TSI2319cds

Contractor Symbol:

Case : SOT23

Datasheet

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P-MOSFET 40V 4.4A 77mΩ

Parameters

Open channel resistance:	108mOhm
Max. drain current:	4,4A
Max. power loss:	2,5W
Case:	SOT23
Manufacturer:	VISHAY
Max. drain-source voltage:	40V
Transistor type:	P-MOSFET

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• Parameters

Open channel resistance:	108mOhm
Max. drain current:	4,4A
Max. power loss:	2,5W
Case:	SOT23
Manufacturer:	VISHAY
Max. drain-source voltage:	40V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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