SI2319CDS-T1-GE3 Vishay

Symbol Micros: TSI2319cds

115908

TSI2319cds

Contractor Symbol:

Case : SOT23

Datasheet

Technical drawing Add to favourites

P-MOSFET 40V 4.4A 77mΩ

Parameters

Open channel resistance:	108mOhm
Max. drain current:	4,4A
Max. power loss:	2,5W
Case:	SOT23
Manufacturer:	VISHAY
Max. drain-source voltage:	40V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: Vishay Manufacturer part number: SI2319CDS-T1-GE3 Case style: SOT23  

External warehouse:

6000 pcs.

Quantity of pcs.	3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,1346

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Packaging:
3000

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	108mOhm
Max. drain current:	4,4A
Max. power loss:	2,5W
Case:	SOT23
Manufacturer:	VISHAY
Max. drain-source voltage:	40V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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