SI2323DS-T1-E3 Vishay
Symbol Micros:
TSI2323ds
Case : SOT23-3
P-MOSFET 20V 3.7A 39mΩ SI2323DS-T1-GE3
Parameters
Open channel resistance: | 68mOhm |
Max. drain current: | 3,7A |
Max. power loss: | 750mW |
Case: | SOT23-3 |
Manufacturer: | VISHAY |
Max. drain-source voltage: | 20V |
Transistor type: | P-MOSFET |
Manufacturer:: Vishay
Manufacturer part number: SI2323DS-T1-E3 RoHS D3..
Case style: SOT23-3 t/r
Datasheet
In stock:
12 pcs.
Quantity of pcs. | 2+ | 10+ | 50+ | 200+ | 500+ |
---|---|---|---|---|---|
Net price (EUR) | 0,5733 | 0,3595 | 0,2819 | 0,2561 | 0,2490 |
Manufacturer:: Vishay
Manufacturer part number: SI2323DS-T1-GE3 RoHS
Case style: SOT23-3 t/r
Datasheet
In stock:
500 pcs.
Quantity of pcs. | 2+ | 10+ | 50+ | 200+ | 500+ |
---|---|---|---|---|---|
Net price (EUR) | 0,5733 | 0,3595 | 0,2819 | 0,2561 | 0,2490 |
Manufacturer:: Vishay
Manufacturer part number: SI2323DS-T1-GE3
Case style: SOT23-3
External warehouse:
3646 pcs.
Quantity of pcs. | 3000+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 0,2490 |
Open channel resistance: | 68mOhm |
Max. drain current: | 3,7A |
Max. power loss: | 750mW |
Case: | SOT23-3 |
Manufacturer: | VISHAY |
Max. drain-source voltage: | 20V |
Transistor type: | P-MOSFET |
Max. gate-source Voltage: | 8V |
Operating temperature (range): | -55°C ~ 150°C |
Mounting: | SMD |
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