SI2323DS-T1-E3 Vishay

Symbol Micros: TSI2323ds
Contractor Symbol:
Case : SOT23-3
P-MOSFET 20V 3.7A 39mΩ SI2323DS-T1-GE3
Parameters
Open channel resistance: 68mOhm
Max. drain current: 3,7A
Max. power loss: 750mW
Case: SOT23-3
Manufacturer: VISHAY
Max. drain-source voltage: 20V
Transistor type: P-MOSFET
Manufacturer:: Vishay Manufacturer part number: SI2323DS-T1-E3 RoHS D3.. Case style: SOT23-3 t/r Datasheet
In stock:
12 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 500+
Net price (EUR) 0,5733 0,3595 0,2819 0,2561 0,2490
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Packaging:
180
Manufacturer:: Vishay Manufacturer part number: SI2323DS-T1-GE3 RoHS Case style: SOT23-3 t/r Datasheet
In stock:
500 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 500+
Net price (EUR) 0,5733 0,3595 0,2819 0,2561 0,2490
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Packaging:
500
Manufacturer:: Vishay Manufacturer part number: SI2323DS-T1-GE3 Case style: SOT23-3  
External warehouse:
3646 pcs.
Quantity of pcs. 3000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,2490
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Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 68mOhm
Max. drain current: 3,7A
Max. power loss: 750mW
Case: SOT23-3
Manufacturer: VISHAY
Max. drain-source voltage: 20V
Transistor type: P-MOSFET
Max. gate-source Voltage: 8V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD