SI2323DS-T1-E3 Vishay

Symbol Micros: TSI2323ds

109692

TSI2323ds

Contractor Symbol:

Case : SOT23-3

Datasheet

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P-MOSFET 20V 3.7A 39mΩ SI2323DS-T1-GE3

Parameters

Open channel resistance:	68mOhm
Max. drain current:	3,7A
Max. power loss:	750mW
Case:	SOT23-3
Manufacturer:	VISHAY
Max. drain-source voltage:	20V
Max. gate-source Voltage:	8V

All parameters

Manufacturer:: Vishay Manufacturer part number: SI2323DS-T1-E3 RoHS Case style: SOT23-3 t/r Datasheet

In stock:

12 pcs.

Quantity of pcs.	2+	10+	40+	180+	720+
Net price (EUR)	0,6283	0,3961	0,3210	0,2869	0,2732

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Until stock lasts Packaging:
180 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	68mOhm
Max. drain current:	3,7A
Max. power loss:	750mW
Case:	SOT23-3
Manufacturer:	VISHAY
Max. drain-source voltage:	20V
Max. gate-source Voltage:	8V
Transistor type:	P-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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