SI2333DDS-T1-GE3 Vishay

Symbol Micros: TSI2333dds

116373

TSI2333dds

Contractor Symbol:

Case : SOT23

Datasheet

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Transistor P-MOSFET; 12V; 8V; 150mOhm; 6A; 1,7W; -55°C ~ 150°C; Replacement: SI2333DDS-T1-BE3; SI2333DDS-T1;

Parameters

Open channel resistance:	150mOhm
Max. power loss:	1,7W
Max. drain current:	6A
Case:	SOT23
Manufacturer:	VISHAY
Max. drain-source voltage:	12V
Transistor type:	P-MOSFET

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Estimated date:
2026-06-19

Quantity of pcs.: 3000

         

 

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Item in delivery

Estimated date:
2026-12-31

Quantity of pcs.: 1

• Parameters

Open channel resistance:	150mOhm
Max. power loss:	1,7W
Max. drain current:	6A
Case:	SOT23
Manufacturer:	VISHAY
Max. drain-source voltage:	12V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	8V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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