SI2333DDS-T1-GE3 Vishay

Symbol Micros: TSI2333dds
Contractor Symbol:
Case : SOT23
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Transistor P-MOSFET; 12V; 8V; 150mOhm; 6A; 1,7W; -55°C ~ 150°C; Replacement: SI2333DDS-T1-BE3; SI2333DDS-T1;
Parameters
Open channel resistance: 150mOhm
Max. drain current: 6A
Max. power loss: 1,7W
Case: SOT23
Manufacturer: VISHAY
Max. drain-source voltage: 12V
Transistor type: P-MOSFET
Manufacturer:: Vishay Manufacturer part number: SI2333DDS-T1-GE3 RoHS Case style: SOT23t/r Datasheet
In stock:
3000 pcs.
Quantity of pcs. 3+ 20+ 100+ 300+ 1000+
Net price (EUR) 0,4134 0,2281 0,1794 0,1661 0,1592
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Packaging:
3000
Manufacturer:: Vishay Manufacturer part number: SI2333DDS-T1-GE3 RoHS O4.. Case style: SOT23t/r Datasheet
In stock:
2700 pcs.
Quantity of pcs. 3+ 20+ 100+ 300+ 1000+
Net price (EUR) 0,4134 0,2281 0,1794 0,1661 0,1592
Add to comparison tool
Packaging:
3000
         
 
Item in delivery
Estimated date:
2025-11-28
Quantity of pcs.: 1
         
 
Item in delivery
Estimated date:
2026-12-31
Quantity of pcs.: 1
Open channel resistance: 150mOhm
Max. drain current: 6A
Max. power loss: 1,7W
Case: SOT23
Manufacturer: VISHAY
Max. drain-source voltage: 12V
Transistor type: P-MOSFET
Max. gate-source Voltage: 8V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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