SI2333DDS-T1-GE3 Vishay

Symbol Micros: TSI2333dds
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Case : SOT23
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P-MOSFET 12V 6A 1.2W
Parameters
Open channel resistance: 150mOhm
Max. drain current: 6A
Max. power loss: 1,7W
Case: SOT23
Manufacturer: VISHAY
Max. drain-source voltage: 12V
Transistor type: P-MOSFET
Manufacturer:: Vishay Manufacturer part number: SI2333DDS-T1-GE3 RoHS O4.. Case style: SOT23t/r Datasheet
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0 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,5842 0,3694 0,2909 0,2655 0,2540
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Packaging:
3000
Open channel resistance: 150mOhm
Max. drain current: 6A
Max. power loss: 1,7W
Case: SOT23
Manufacturer: VISHAY
Max. drain-source voltage: 12V
Transistor type: P-MOSFET
Max. gate-source Voltage: 8V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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