SI2333DDS-T1-GE3 Vishay
Symbol Micros:
TSI2333dds
Case : SOT23
Transistor P-MOSFET; 12V; 8V; 150mOhm; 6A; 1,7W; -55°C ~ 150°C; Replacement: SI2333DDS-T1-BE3; SI2333DDS-T1;
Parameters
| Open channel resistance: | 150mOhm |
| Max. drain current: | 6A |
| Max. power loss: | 1,7W |
| Case: | SOT23 |
| Manufacturer: | VISHAY |
| Max. drain-source voltage: | 12V |
| Transistor type: | P-MOSFET |
Manufacturer:: Vishay
Manufacturer part number: SI2333DDS-T1-GE3 RoHS O4..
Case style: SOT23t/r
Datasheet
In stock:
2700 pcs.
| Quantity of pcs. | 3+ | 20+ | 100+ | 300+ | 1000+ |
|---|---|---|---|---|---|
| Net price (EUR) | 0,4130 | 0,2279 | 0,1793 | 0,1659 | 0,1591 |
Manufacturer:: Vishay
Manufacturer part number: SI2333DDS-T1-GE3 RoHS
Case style: SOT23t/r
Datasheet
In stock:
3000 pcs.
| Quantity of pcs. | 3+ | 20+ | 100+ | 300+ | 1000+ |
|---|---|---|---|---|---|
| Net price (EUR) | 0,4130 | 0,2279 | 0,1793 | 0,1659 | 0,1591 |
Manufacturer:: Vishay
Manufacturer part number: SI2333DDS-T1-GE3
Case style: SOT23
External warehouse:
18000 pcs.
| Quantity of pcs. | 3000+ (Please wait for the order confirmation) |
|---|---|
| Net price (EUR) | 0,1591 |
Item in delivery
Estimated date:
2026-12-31
Quantity of pcs.: 1
| Open channel resistance: | 150mOhm |
| Max. drain current: | 6A |
| Max. power loss: | 1,7W |
| Case: | SOT23 |
| Manufacturer: | VISHAY |
| Max. drain-source voltage: | 12V |
| Transistor type: | P-MOSFET |
| Max. gate-source Voltage: | 8V |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | SMD |
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