SI2333DDS-T1-GE3 Vishay

Symbol Micros: TSI2333dds

116373

TSI2333dds

Contractor Symbol:

Case : SOT23

Datasheet

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Transistor P-MOSFET; 12V; 8V; 150mOhm; 6A; 1,7W; -55°C ~ 150°C; Replacement: SI2333DDS-T1-BE3; SI2333DDS-T1;

Parameters

Open channel resistance:	150mOhm
Max. drain current:	6A
Max. power loss:	1,7W
Case:	SOT23
Manufacturer:	VISHAY
Max. drain-source voltage:	12V
Max. gate-source Voltage:	8V

All parameters

Manufacturer:: Vishay Manufacturer part number: SI2333DDS-T1-GE3 RoHS Case style: SOT23t/r Datasheet

In stock:

3000 pcs.

Quantity of pcs.	3+	20+	100+	300+	1000+
Net price (EUR)	0,4049	0,2234	0,1758	0,1627	0,1560

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Packaging:
3000 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	150mOhm
Max. drain current:	6A
Max. power loss:	1,7W
Case:	SOT23
Manufacturer:	VISHAY
Max. drain-source voltage:	12V
Max. gate-source Voltage:	8V
Transistor type:	P-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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