SI2336DS-T1-GE3 VISHAY

Symbol Micros: TSI2336ds

200400

TSI2336ds

Contractor Symbol:

Case : SOT23-3

Datasheet

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Transistor N-Channel MOSFET; 30V; 8V; 52mOhm; 5,2A; 1,8W; -55°C ~ 150°C; SI2336DS-T1-BE3;

Parameters

Open channel resistance:	52mOhm
Max. drain current:	5,2A
Max. power loss:	1,8W
Case:	SOT23-3
Manufacturer:	VISHAY
Max. drain-source voltage:	30V
Max. gate-source Voltage:	8V

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Estimated date:
2027-06-11

Quantity of pcs.: 3000

• Parameters

Open channel resistance:	52mOhm
Max. drain current:	5,2A
Max. power loss:	1,8W
Case:	SOT23-3
Manufacturer:	VISHAY
Max. drain-source voltage:	30V
Max. gate-source Voltage:	8V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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