SI2337DS-T1-GE3

Symbol Micros: TSI2337ds

106384

TSI2337ds

Contractor Symbol:

Case : SOT23

Datasheet

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P-MOSFET 2.2A 80V 2.5W 0.27Ω SI2337DS-T1-E3

Parameters

Open channel resistance:	303mOhm
Max. drain current:	2,2A
Max. power loss:	2,5W
Case:	SOT23
Manufacturer:	VISHAY
Max. drain-source voltage:	80V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: Vishay Manufacturer part number: SI2337DS-T1-GE3 RoHS Case style: SOT23t/r Datasheet

In stock:

10 pcs.

Quantity of pcs.	2+	10+	30+	100+	400+
Net price (EUR)	0,9022	0,5662	0,4699	0,4182	0,3924

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Packaging:
100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	303mOhm
Max. drain current:	2,2A
Max. power loss:	2,5W
Case:	SOT23
Manufacturer:	VISHAY
Max. drain-source voltage:	80V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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